Raman image of SiC-4H epilayer highlighting areas of non-uniformity (jpg)

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Raman image of SiC-4H epilayer highlighting areas of non-uniformity

Raman image of SiC-4H epilayer highlighting areas of non-uniformity. Red regions represent inclusions of SiC-6H, Sic-3C or Si. Black regions are voids. This technique also allows the strain in the layer to be visualised qualitatively (green and blue). 8 million spectra, ~900 µm (0.3 µm step size), <12 hours (5 ms/spectrum)

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